Semiconductor device and method for growing semiconductor crystal

摘要

A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

主权项

1. A semiconductor device comprising: a base substrate; patterns on the base substrate; a buffer layer on the base substrate; and an epitaxial layer on the buffer layer; wherein the pattern is patterns are a-self-assembled patterns; and wherein the base substrate, the patterns, the buffer layer, and the epitaxial layer each comprises a same material; wherein the buffer layer is laterally grown between the patterns, wherein the buffer layer is horizontally grown on only the surfaces of the base substrate exposed between the patterns to completely fill the spaces between the patterns, and wherein a height of each of the patterns corresponds to a height of the buffer layer.