| 发明名称 | Tunneling devices and methods of manufacturing the same | ||
| 摘要 | A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer. | ||
| 申请公布号 | US9269775(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414188862 | 申请日期 | 2014.02.25 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD.;SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION | 发明人 | Choi Jun-hee;Yoo Won-jong;Lee Seung-hwan;Choi Min-sup;Liu Xiao Chi;Lee Ji-a |
| 分类号 | H01L29/737;H01L29/16;H01L29/73;H01L29/66;H01L29/88 | 主分类号 | H01L29/737 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A tunneling device comprising: a tunnel barrier layer; a first material layer on a first surface of the tunnel barrier layer, the first material layer including a P-type two-dimensional (2D) material; and a second material layer on a second surface of the tunnel barrier layer, the second material layer including an N-type 2D material, wherein the tunneling device uses a tunneling current through the tunnel barrier layer between the first material layer and the second material layer, and wherein the first material layer has a work function of about 5.0 eV to about 5.9 eV, and the second material layer has a work function of about 3.2 eV to about 4.0 eV. | ||
| 地址 | Gyeonggi-Do KR | ||