| 发明名称 | Method of manufacturing bump | ||
| 摘要 | A bump manufacturing method may be provided. The bump manufacturing method may include forming a bump on an electrode pad included in a semiconductor device, and controlling a shape of the bump by reflowing the bump formed on the semiconductor device under an oxygen atmosphere. | ||
| 申请公布号 | US9269620(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201213710586 | 申请日期 | 2012.12.11 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Ok Jung Tae;Kim Hak Hwan;Paek Ho Sun;Kim Kwon Joong |
| 分类号 | H01L23/498;H01L21/768;H01L23/48;H01L23/485;H01L23/00 | 主分类号 | H01L23/498 |
| 代理机构 | Muir Patent Law, PLLC | 代理人 | Muir Patent Law, PLLC |
| 主权项 | 1. A method of manufacturing a bump, the method comprising: forming a bump on an electrode pad included on a semiconductor chip; and controlling a shape of the bump by: adjusting an amount of oxygen concentration in a reflow chamber to select between a first concentration within a first range of oxygen concentration and a second concentration within a second range of oxygen concentration lower than the first range of oxygen concentration, the second concentration being lower than the first concentration; andreflowing the bump formed on the semiconductor chip under an oxygen atmosphere having the selected oxygen concentration, andcontrolling the shape of the bump to have one of a globular shape or a planar shape based on the selected oxygen concentration. | ||
| 地址 | Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR | ||