Semiconductor device with thin profile WLCSP with vertical interconnect over package footprint

摘要

A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of the first semiconductor die is oriented toward an active surface of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of a back surface of the second semiconductor die opposite the active surface is removed. Conductive pillars are formed around the second semiconductor die. TSVs can be formed through the first semiconductor die. An interconnect structure is formed over the back surface of the second semiconductor die, encapsulant, and conductive pillars. The interconnect structure is electrically connected to the conductive pillars. A portion of a back surface of the first semiconductor die opposite the active surface is removed. A heat sink or shielding layer can be formed over the back surface of the first semiconductor die.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor wafer including a plurality of first semiconductor die; mounting a second semiconductor die to the first semiconductor die; depositing an encapsulant over the first and second semiconductor die; removing a portion of a surface of the second semiconductor die; forming a via through the encapsulant over a footprint of the first semiconductor die and extending to the first semiconductor die after removing the portion of the surface of the second semiconductor die; forming a conductive material in the via to form a conductive pillar extending to through the encapsulant to the first semiconductor die; forming a build-up interconnect structure including an insulating layer and a redistribution layer each in direct contact with the encapsulant and second semiconductor die, the redistribution layer formed in direct contact with the conductive pillar; and removing a portion of a surface of the first semiconductor die after forming the build-up interconnect structure.