Contact on a heterogeneous semiconductor substrate

摘要

A method is provided for producing a microelectronic device with plural zones made of a metal and semiconductor compound, from semiconductor zones made of different semiconductor materials, and on which a thin semiconductor layer is formed prior to the deposition of a metal layer so as to lower the nucleation barrier of the semiconductor zones when reacting with the metal layer.

主权项

1. A method for producing a semiconductor device including plural zones made of a compound metal and semiconductor based compound, said method comprising:
on a support including at least one first semiconductor zone made of a first semiconductor material, and at least one second semiconductor zone made of a second semiconductor material different from said first semiconductor material: forming a thin semiconductor layer in contact with said first semiconductor material and said second semiconductor material,
wherein the thin semiconductor layer has a thickness and is made from a given semiconductor material, both thickness and material of said thin semiconductor layer being chosen such that said thin semiconductor layer has a nucleation barrier lower than the nucleation barrier of at least one of the said first and second semiconductor zones, the thin semiconductor layer having a higher Ge concentration than the at least one first semiconductor zone made of the first semiconductor material,wherein, on the support, at least one surface of the at least one first semiconductor zone and at least one surface of the at least one second semiconductor zone are coplanar and are laterally separated by at least one insulating zone, andwherein, on the support, at least one surface of the at least one insulating zone is coplanar with the at least one surface of the at least one first semiconductor zone and the at least one surface at least one second semiconductor zone; depositing a metal layer on said thin semiconductor layer; and annealing for a given duration and at a given temperature so as to form at least one first region on said first semiconductor zone made of a first compound of metal material and said first semiconductor material, and at least one second region on said second semiconductor zone made of a second compound of metal material and said second semiconductor material.