Composition for forming resist underlayer film, and pattern-forming method

摘要

A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.;

主权项

1. A composition for forming a resist underlayer film,comprising:
a polysiloxane; an acid diffusion control agent capable of inhibiting diffustion of an acid; and a solvent composition capable of dissolving the polysiloxane, the solvent composition comprising:
an organic solvent which comprises a compound represented by formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C., includes a compound wherein, in the formula (1), R1 and R2 each independently represent an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms; R3 represents a hydrogen atom or a methyl group; n is an integer of 1 to 4, in a case where n is no less than 2, a plurality of R3s are identical or different; a content of the organic solvent in the solvent composition is no less than 1% by mass and no greater than 50% by mass; and wherein the solvent composition further comprises an alkylene glycol monoalkyl ether acetate compound having a standard boiling point of less than 150.0° C., a content of no less than 50% by mass and no greater than 99% by mass.