Engineered substrates for semiconductor devices and associated systems and methods

摘要

Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

主权项

1. A semiconductor device, comprising:
a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region; and an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials, wherein at least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light, and wherein at least one of the first material and the second material includes a lens shape.