Amorphous oxide and thin film transistor

摘要

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

主权项

1. A thin film transistor device comprising:
a drain electrode; a source electrode; a channel layer contacting the drain electrode and the source electrode,
wherein the channel layer is formed of an amorphous InxSn1−xOxide (0.8≦x ≦0.9) consisting of SnO2 in the presence of In2O3 as a host oxide, further the channel layer is prepared by a sputtering method or a pulsed laser deposition method using a In2O3—SnO2 polycrystalline sinter as a target in an atmosphere containing oxygen gas, andthe channel layer having a transparent, semi-insulating property represented by the electron mobility is more than 1 cm2/(V·sec) and the electron carrier concentration is 1018/cm3 or less as measured by Hall-effect measurement at room temperature; a gate electrode; and a gate insulating film positioned between the gate electrode and the channel.