Semiconductor device having V-shaped region

摘要

Among other things, a semiconductor device or transistor and a method for forming the semiconductor device are provided for herein. The semiconductor device comprises one or more v-shaped recesses in which stressed monocrystalline semiconductor material, such as silicon germanium, is grown, to form at least one of a source or a drain of the semiconductor device. The one or more v-shaped recesses are etched into a substrate in-situ. The semiconductor device comprises at least one of a source or a drain having a height-to-length ratio exceeding at least 1.6 when poly spacing between a first part of the semiconductor device (e.g., first transistor) and a second part of the semiconductor device (e.g., second transistor) is less than about 60 nm.

主权项

1. A transistor, comprising:
a source/drain region having a height-to-length ratio exceeding at least 1.5 when a poly spacing between the transistor and a second transistor is less than about 75 nm and having a height-to-length ratio exceeding at least 1.6 when the poly spacing between the transistor and the second transistor is less than about 60 nm.