发明名称 |
Semiconductor apparatus |
摘要 |
A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including AlN and second lattice layers including GaN; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from Fe, Mg and C. |
申请公布号 |
US9269799(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201313952827 |
申请日期 |
2013.07.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
Ishiguro Tetsuro;Yamada Atsushi;Nakamura Norikazu |
分类号 |
H01L27/00;H01L29/778;H01L29/20;H01L29/423;H01L29/66;H01L29/10;H01L29/15;B82Y10/00 |
主分类号 |
H01L27/00 |
代理机构 |
Kratz, Quintos & Hanson, LLP |
代理人 |
Kratz, Quintos & Hanson, LLP |
主权项 |
1. A semiconductor apparatus comprising:
a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including AlN and second lattice layers including GaN; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from Fe, Mg and C, wherein a thickness of the second lattice layer is not less than 10 nm, wherein a thickness of the strained layer superlattice buffer layer is not less than 1000 nm, wherein the buffer layer further comprises three layers having different Al compositions. |
地址 |
Kawasaki JP |