| 发明名称 | SOI wafer, manufacturing method therefor, and MEMS device | ||
| 摘要 | In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface. | ||
| 申请公布号 | US9266715(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414193209 | 申请日期 | 2014.02.28 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Yoshikawa Eiji;Ichikawa Jyunichi;Yoshida Yukihisa |
| 分类号 | H01L21/00;B81B7/00;H01L21/762;H01L29/16;B81B3/00;B81C1/00;H01L23/26 | 主分类号 | H01L21/00 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC ;Turner Richard C. |
| 主权项 | 1. A silicon on insulator (SOI) wafer, comprising: a first silicon wafer and a second silicon wafer which are bonded together with an oxide film therebetween; a cavity formed on a bonding surface of the first silicon wafer; and a gettering material that is formed on a surface of the first silicon wafer on a side opposite to the bonding surface. | ||
| 地址 | Tokyo JP | ||