Methods and apparatuses for inspecting semiconductor devices using electron beams

摘要

Methods and apparatuses for inspecting a semiconductor device using electron beam are provided. The methods may include performing detection operations on a detection target pattern N times and determining a number of detection operations which have been performed until a maximum secondary electron amount of the detection target pattern is obtained. Each of the detection operations may include irradiating the detection target pattern with an electron beam, interrupting the irradiating and detecting a secondary electron amount of the detection target pattern after a detection waiting time has elapsed since the interrupting the irradiating.

主权项

1. A method of inspecting a semiconductor device, the method comprising:
obtaining a reference electron-decay time of a reference pattern that comprises a normal structure, the normal structure comprising a first conductive pattern that is substantially free of insulating residue; performing detection operations on a detection target pattern a number of times; obtaining an electron-decay time of the detection target pattern, wherein the detection target pattern comprises an abnormal structure that comprises a second conductive pattern including insulating residue therein, wherein each of the detection operations courses irradiating an electron beam to the detection target pattern, interrupting the electron beam for the reference electron-decay time and detecting a secondary electron amount of the detection target pattern at or after the reference electron-decay time has elapsed since the interrupting the electron beam, wherein the electron-decay time of the detection target pattern is greater than the reference electron-decay time of the reference pattern, and wherein a detection waiting time, which is a time interval between interrupting an electron beam and detecting a secondary electron amount of the detection target pattern in each of the detection operations, is less than the electron-decay time of the detection target pattern; and determining a number of detection operations which have been performed until a maximum secondary electron amount of the detection target pattern is obtained.