发明名称 Nonvolatile memory system, storage device and method for operating nonvolatile memory device
摘要 A nonvolatile memory device includes a data generating unit for generating a first reference value randomly or pseudo-randomly according to a first program request to program data in a memory cell, a seed selecting unit for selecting at least one of a plurality of seeds using the first reference value, and a randomizer for generating randomized data by using the selected seed. The data generating unit regenerates the first reference value as a second reference value different from the first reference value when a second program request is made, and the seed selecting unit selects another seed using the second reference value.
申请公布号 US9268531(B1) 申请公布日期 2016.02.23
申请号 US201514722751 申请日期 2015.05.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Woo Seong-Hoon;Kim Hak-Sun;Choi Seong-Hyeog;Kong Jun-Jin;Son Hong-Rak;Won Soon-Jae;Chung Jung-Soo
分类号 G06F7/58;G11C16/04 主分类号 G06F7/58
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A memory system, comprising: a vertical NAND memory, comprising a plurality of memory blocks, each of the memory blocks comprises a plurality of memory cells, wherein the memory blocks have three-dimensional (3D) structure in which the memory cells are stacked on a substrate in a vertical direction; and a memory controller coupled to the vertical NAND memory, comprising: a data generating unit for generating a first reference value randomly or pseudo-randomly according to a first program request to program data in the memory cell;a seed selecting unit for selecting at least one of a plurality of seeds using the first reference value; anda randomizer for generating randomized data by using the selected seed, wherein the data generating unit generates a second reference value different from the first reference value when a second program request is made, and the seed selecting unit selects another seed using the second reference value.
地址 Suwon-Si, Gyeonggi-Do KR