Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same

摘要

Disclosed are a resistance change memory device, a method of fabricating the same, and a resistance change memory array including the same. The resistance change memory device includes a first electrode and a second electrode. A hybrid switching layer is interposed between the first electrode and the second electrode. The hybrid switching layer is a metal oxide layer having both threshold switching characteristics and memory switching characteristics.

主权项

1. A resistance change memory device comprising:
a first electrode; a second electrode; and a hybrid switching layer disposed between the first electrode and the second electrode, the hybrid switching layer being a metal oxide layer having both threshold switching characteristics and memory switching characteristics, wherein the hybrid switching layer comprises: a threshold switching layer disposed on the first electrode and having threshold switching characteristics; and a memory switching layer formed by surface treatment of the threshold switching layer with oxygen and having memory switching characteristics, wherein the memory switching layer and the threshold switching layer are formed of the same kind of metal oxide and have different oxygen content.