| 发明名称 | Image sensor device with improved quantum efficiency | ||
| 摘要 | A semiconductor device includes a substrate, a semiconductor layer and a switching element. The semiconductor layer is disposed on the substrate. The semiconductor layer has a light-sensing portion and includes microstructures at a side face area corresponding to the light-sensing portion. The switching element is disposed on the semiconductor layer. In the semiconductor device, the switching element and the light-sensing portion are staggered. | ||
| 申请公布号 | US9269733(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414329337 | 申请日期 | 2014.07.11 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Tu Chien-Nan;Yeh Yu-Lung;Lin Hsing-Chih;Huang Chien-Chang |
| 分类号 | H01L23/52;H01L27/146 | 主分类号 | H01L23/52 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A semiconductor device, comprising: a substrate; a first semiconductor layer on the substrate, wherein the first semiconductor layer has a light-sensing portion and comprises a plurality of microstructures at a side face area of the first semiconductor layer corresponding to the light-sensing portion; and a switching element on the first semiconductor layer, wherein the switching element and the light-sensing portion are staggered. | ||
| 地址 | Hsinchu TW | ||