发明名称 |
Semiconductor device and method for producing the same |
摘要 |
A power semiconductor device comprises a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face, the back face forming a backside of the device, a vertical p-type FET and a vertical n-type FET provided laterally adjacent to each other on the front face of the first substrate, wherein one of the FETs has a first drift zone with a complementary doping to the first dopant of the first substrate, and wherein the p-type FET and the n-type FET share the first substrate as a common backside, and wherein a region between the first drift zone and the first substrate comprises a highly conductive structure providing a low ohmic connection between the first drift zone and the first substrate. Further, a method for producing such a device is provided. |
申请公布号 |
US9269713(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201313909726 |
申请日期 |
2013.06.04 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Irsigler Peter;Hirler Franz;Schulze Hans-Joachim |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
Murphy, Bilak & Homiller, PLLC |
代理人 |
Murphy, Bilak & Homiller, PLLC |
主权项 |
1. A power semiconductor device comprising:
a first substrate that is highly doped with a first dopant type, the first substrate having a front face and a back face, the back face forming a backside of the device, a vertical p-type FET and a vertical n-type FET provided laterally adjacent to each other on the front face of the first substrate, wherein a first of the vertical FETs has a first drift zone and a second of the vertical FETs has a complementary second drift zone with a complementary doping to the first dopant of the first substrate, and a complementary highly doped second region provided between the complementary second drift zone and the first substrate, wherein the p-type FET and the n-type FET share the first substrate as a common backside, and wherein a region between the complementary second drift zone and the first substrate, including at least a part of the complementary highly doped second region, comprises a highly conductive structure providing a low ohmic connection between the complementary second drift zone and the first substrate. |
地址 |
Villach AT |