发明名称 |
Semiconductor memory device and semiconductor system including the same |
摘要 |
Disclosed herein is a semiconductor memory device using a pre-fetch method and a semiconductor system including the same. The semiconductor memory device may include a memory bank having an odd-numbered array region suitable for inputting/outputting data through N first local lines in response to an odd-numbered column address, and an even-numbered array region suitable for inputting/outputting data through N second local lines in response to an even-numbered column address, N being a positive integer, a column address generation unit suitable for consecutively generating the odd-numbered column address and the even-numbered column address whose generation sequence is controlled depending on whether an external column address has an even-numbered value or an odd-numbered value, and N global lines coupled in common to the N first local lines and the N second local lines, suitable for inputting/outputting data. |
申请公布号 |
US9269419(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201314106803 |
申请日期 |
2013.12.15 |
申请人 |
SK Hynix Inc. |
发明人 |
Lee Geun-Il |
分类号 |
G11C7/00;G11C11/4076;G11C7/10;G11C11/4096;G11C11/4097 |
主分类号 |
G11C7/00 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A semiconductor memory device comprising:
a memory bank having an odd-numbered array region suitable for inputting/outputting data through N first local lines in response to an odd-numbered column address, and an even-numbered array region suitable for inputting/outputting data through N second local lines in response to an even-numbered column address, N being a positive integer; a column address generation unit suitable for consecutively generating the odd-numbered column address and the even-numbered column address in response to whether an external column address has an even-numbered value or an odd-numbered value; and N global lines coupled in common to the N first local lines and the N second local lines, suitable for inputting/outputting data, wherein the column address generation unit includes:
a column address decoding unit suitable for generating an internal column address by decoding the external column address; anda column address output unit suitable for outputting the internal column address as the even-numbered or odd-numbered column address, inverting a least significant bit (LSB) of the internal column address, and outputting the inverted column address as the odd-numbered column address or the even-numbered column address. |
地址 |
Gyeonggi-do KR |