Dense finFET SRAM

摘要

A method for fabricating the device includes patterning a first structure and a second structure on a semiconductor device. A first angled ion implantation is applied to the second structure such that the first structure is protected and a second angled ion implantation is applied to the first structure such that the second structure is protected, wherein exposed portions of the first and second structures have an altered rate of oxidation. Oxidation is performed to form thicker or thinner oxide portions on the exposed portions of the first and second structures relative to unexposed portions of the first and second structures. Oxide portions are removed to an underlying layer of the first and second structures. The first and second structures are removed. Spacers are formed about a periphery of remaining oxide portions. The remaining oxide portions are removed. A layer below the spacers is patterned to form integrated circuit features.

主权项

1. A method for fabricating a semiconductor device, comprising:
applying an angled ion implantation to at least one of a first and second structure such that one of the first and second structures has a greater oxidation rate than an other of the first and second structures, wherein a first oxide having a first thickness forms on said first structure and a second oxide of a second thickness forms on said second structure; forming a first spacer on the first oxide and a second spacer on the second oxide, wherein the first and second spacer provide an etch mask; and patterning a layer below the first spacer and the second spacer using the etch mask to form at least a first plurality of fin structures having a first pitch and a second plurality of fin structures having a second pitch.