发明名称 Method of making flexible, foldable, and stretchable devices
摘要 A method of making a flexible, foldable, stretchable electronic device. The method includes deposition of a polymer layer, such as parylene C, to impart flexibility to the device. The device overcomes the limitations of related flexible electronics schemes by employing established silicon-on-insulator complementary metal-oxide-semiconductor technology with a flexible enclosure. Devices made in such a way may be used in a wide variety of applications including incorporation into medical devices.
申请公布号 US9269588(B2) 申请公布日期 2016.02.23
申请号 US201314418203 申请日期 2013.07.31
申请人 WAYNE STATE UNIVERSITY 发明人 Xu Yong;Tu Hongen;Kim Eric G R;John Jessin K.
分类号 H01L21/00;H01L21/76;H01L21/3065;H05K1/02;H01L29/06;H01L21/308;H01L27/12;B81C1/00;G01L19/00;H01L21/56;H05K3/00;H01L29/78;G01L9/00 主分类号 H01L21/00
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. A method of making a flexible device comprising: providing a silicon-on-insulator wafer comprising a device layer having at least one silicon island and at least one metal trace, the device layer being posited on a buried oxide layer, the buried oxide layer being posited on a silicon substrate layer; depositing a first polymer layer over the silicon-on-insulator wafer, the first polymer layer being above and in contact with the at least one silicon island and the at least one metal trace; forming at least one etching windows through the first polymer layer, the device layer, and the buried oxide layer; using an etchant through the at least one etching window to degrade the silicon substrate layer; depositing a second polymer layer to seal the at least one etching window and conformally over the silicon substrate layer and the silicon-on-insulator wafer; and removing the silicon substrate layer.
地址 Detroit MI US