发明名称 Techniques for patterning a substrate
摘要 Various techniques for patterning a substrate are disclosed. Specifically, implantation of the first species into an anti-reflective coating layer is contemplated to reduce stress in the layer that may be generated during the exposure stage or development stage. During these steps, the resist layer or the resist structure may under mechanical changes (e.g. shrinkage) while it is in contact with the anti-reflective layer. Such changes may introduce stress in the anti-reflective layer, which may contribute to excessive line edge roughness (LER) or line width roughness (LWR). By implanting the first species before, during, or after these steps, the stress in the anti-reflective layer may be avoided or compensated, and excessive LER or LWR may be avoided or reduced.
申请公布号 US9268228(B2) 申请公布日期 2016.02.23
申请号 US201414176856 申请日期 2014.02.10
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Godet Ludovic;Ma Tristan
分类号 G03F7/26;G03F7/09;G03F7/40;H01L21/00 主分类号 G03F7/26
代理机构 代理人
主权项 1. A method of patterning a substrate, comprising: coating said substrate with an intermediate layer; implanting first impurities into said intermediate layer; depositing a resist layer on said intermediate layer, where said implanting is performed before said depositing; exposing a portion of said resist layer to a radiation source; removing said portion of said resist layer to expose a portion of said intermediate layer; and etching said portion of said intermediate layer.
地址 Gloucester MA US