发明名称 Method for producing trichlorosilane
摘要 A mixture containing methyldichlorosilane, tetrachlorosilane, and trichlorosilane is distilled to fractionate a fraction with a higher content of methyldichlorosilane than the mixture before distillation. Subsequently, the fraction thus fractionated is heated to disproportionate chlorine between methyldichlorosilane and tetrachlorosilane to disproportionate methyldichlorosilane into methyltrichlorosilane. Subsequently, the fraction after disproportionation containing methyltrichlorosilane is purified by distillation to separate high-purity trichlorosilane. Having a close boiling point to that of trichlorosilane (32° C.), which is a target product to be purified by distillation, removal of methyldichlorosilane (boiling point of 41° C.) has been difficult. The present invention removes methyldichlorosilane more easily by converting it into methyltrichlorosilane (boiling point of 66° C.) through disproportionation of chlorine between methyldichlorosilane and tetrachlorosilane.
申请公布号 US9266742(B2) 申请公布日期 2016.02.23
申请号 US201113583794 申请日期 2011.03.01
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 Tanaka Shuji;Tabata Masaki
分类号 B01D3/14;C01B33/107;B01D3/00 主分类号 B01D3/14
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for producing high-purity trichlorosilane from a mixture comprising methyldichlorosilane (CH3HSiCl2), tetrachlorosilane (SiCl4), and trichlorosilane (HSiCl3), said method comprising of: (A) distilling said mixture to obtain a fraction having a higher content of methyldichlorosilane than a methyldichlorosilane content of said mixture before said distilling; (B) heating said fraction having a higher content of methyldichlorosilane to disproportionate chlorine between methyldichlorosilane and tetrachlorosilane to convert methyldichlorosilane into methyltrichlorosilane (CH3SiCl3), to obtain a disproportionated fraction; and (C) distilling said disproportionated fraction to separate trichlorosilane, wherein either: (a) said heating is not performed in the presence of a catalyst; (b) said heating comprises heating in a heated vessel with a fluidized bed of silicon comprising copper chloride as a catalyst under a reducing atmosphere comprising hydrogen; or (c) said heating comprises heating to a temperature of from 400 to 600° C.
地址 Tokyo JP
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