发明名称 |
Electronic device, memory cell, and method of flowing electric current |
摘要 |
An electronic device includes two conductive electrodes. A first current path extends from one of the electrodes to the other and has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV. A second current path extends from the one electrode to the other and is circuit-parallel the first current path. The second current path exhibits a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibits a minimum 100-times decrease in electrical conductivity for decreasing temperature within the 50° C. temperature range. Other embodiments are disclosed. |
申请公布号 |
US9269899(B1) |
申请公布日期 |
2016.02.23 |
申请号 |
US201514615188 |
申请日期 |
2015.02.05 |
申请人 |
Micron Technology, Inc. |
发明人 |
Karda Kamal M.;Milojevic Marko;Wells David H.;Gealy F. Daniel |
分类号 |
G11C5/12;H01L45/00;G11C13/00 |
主分类号 |
G11C5/12 |
代理机构 |
Wells St. John, P.S. |
代理人 |
Wells St. John, P.S. |
主权项 |
1. An electronic device, comprising:
two conductive electrodes; a first current path from one of the electrodes to the other that has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV; and a second current path from the one electrode to the other that is circuit-parallel the first current path, the second current path exhibiting a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibiting a minimum 100-times decrease in electrical conductivity for decreasing temperature within said 50° C. temperature range. |
地址 |
Boise ID US |