发明名称 Electronic device, memory cell, and method of flowing electric current
摘要 An electronic device includes two conductive electrodes. A first current path extends from one of the electrodes to the other and has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV. A second current path extends from the one electrode to the other and is circuit-parallel the first current path. The second current path exhibits a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibits a minimum 100-times decrease in electrical conductivity for decreasing temperature within the 50° C. temperature range. Other embodiments are disclosed.
申请公布号 US9269899(B1) 申请公布日期 2016.02.23
申请号 US201514615188 申请日期 2015.02.05
申请人 Micron Technology, Inc. 发明人 Karda Kamal M.;Milojevic Marko;Wells David H.;Gealy F. Daniel
分类号 G11C5/12;H01L45/00;G11C13/00 主分类号 G11C5/12
代理机构 Wells St. John, P.S. 代理人 Wells St. John, P.S.
主权项 1. An electronic device, comprising: two conductive electrodes; a first current path from one of the electrodes to the other that has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV; and a second current path from the one electrode to the other that is circuit-parallel the first current path, the second current path exhibiting a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibiting a minimum 100-times decrease in electrical conductivity for decreasing temperature within said 50° C. temperature range.
地址 Boise ID US
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