发明名称 |
Ion beam source |
摘要 |
An ion beam source includes a magnetic field unit including a first side facing a target object to be treated and a second side, where the first side is opened and the second side is closed, and the first side includes a plurality of magnetic pole portions arranged at predetermined intervals with an N-pole and an S-pole alternatively or with same magnetic poles and configured to form a closed loop of plasma electrons and an electrode unit arranged at a lower end of the closed loop. The ion beam source is configured to rotate the plasma electrons within a process chamber along the closed loop, to generate plasma ions from an internal gas within the process chamber, and to provide the plasma ions to the target object. |
申请公布号 |
US9269535(B1) |
申请公布日期 |
2016.02.23 |
申请号 |
US201514923363 |
申请日期 |
2015.10.26 |
申请人 |
FINE SOLUTION CO., LTD. |
发明人 |
Hwang Yun Seok;Huh Yun Sung |
分类号 |
H01J37/08;H01J37/30 |
主分类号 |
H01J37/08 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. An ion beam source, comprising:
a magnetic field unit including a first side facing a target object to be treated and a second side, the first side opened and the second side closed, the first side including a plurality of magnetic pole portions arranged at predetermined intervals with an N-pole and an S-pole alternatively or with same magnetic poles and configured to form a closed loop of plasma electrons; and an electrode unit arranged at a lower end of the closed loop, wherein the ion beam source is configured
to rotate the plasma electrons within a process chamber along the closed loop,to generate plasma ions from an internal gas within the process chamber, andto provide the plasma ions to the target object. |
地址 |
Gyeonggi-do KR |