| 摘要 |
A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable semiconductor device including the transistor is provided. A semiconductor device includes a multi-layer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multi-layer film, and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. In the semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer is in contact with the oxide layer, and the oxide layer contains indium and has a larger energy gap than the oxide semiconductor layer. |
| 主权项 |
1. A semiconductor device comprising:
a multi-layer film including a first oxide layer, an oxide semiconductor layer over the first oxide layer, and a second oxide layer over the oxide semiconductor layer; a gate insulating film in contact with the multi-layer film; a gate electrode overlapping with the multi-layer film with the gate insulating film therebetween; and a protective layer over the gate electrode, the protective layer comprising a first layer, a second layer, and a third layer, wherein each of the first oxide layer, the second oxide layer, and the oxide semiconductor layer contains indium, wherein the oxide semiconductor layer is in contact with each of the first oxide layer and the second oxide layer, wherein a band gap of the first oxide layer is larger than a band gap of the oxide semiconductor layer, wherein a band gap of the second oxide layer is larger than the band gap of the oxide semiconductor layer, wherein the first layer comprises silicon oxide or silicon oxynitride whose spin density attributed to a signal with a g factor of 2.001 in ESR is less than or equal to 3×1017 spins/cm3, wherein the second layer comprises silicon oxide or silicon oxynitride and comprises excess oxygen, and wherein the third layer comprises silicon nitride. |
