发明名称 Array substrate for liquid crystal display device and method for fabricating the same
摘要 An array substrate for the liquid crystal display device, the array substrate includes: a first insulating film pattern on an insulating substrate and having an opening; a first light shielding film pattern on the first insulating film pattern including the opening; a gate insulating film over the entire surface of the insulating substrate including the first light shielding film pattern; an active layer on top of the gate insulating film and overlapping the first light shielding film pattern; a pixel electrode on top of the gate insulating film to be separated from the active layer; a source electrode and a drain electrode on top of the active layer, the drain electrode being separated from the source electrode and directly connected to the pixel electrode; a passivation film over the entire surface of the insulating substrate including the source electrode and the drain electrode; a second insulating film pattern on top of the passivation film and overlapping the first light shielding film pattern; a second light shielding film pattern on the second insulating film pattern; and a plurality of divided common electrodes on top of the passivation film and overlapping the pixel electrode.
申请公布号 US9269818(B2) 申请公布日期 2016.02.23
申请号 US201213729855 申请日期 2012.12.28
申请人 LG DISPLAY CO., LTD. 发明人 Shim YuRi;Kang SungGu;Chung EuiHyun;Lee SunYong
分类号 H01L29/10;H01L29/04;H01L29/786;G02F1/1362;H01L29/66 主分类号 H01L29/10
代理机构 Brinks Gilson & Lione 代理人 Brinks Gilson & Lione
主权项 1. An array substrate for a liquid crystal display device, the array substrate comprising: a first insulating film pattern on an insulating substrate, the first insulating film pattern having an opening and side surfaces defining the opening; a first light shielding film pattern on the top surface of the first insulating film pattern and on the side surfaces of the opening; a gate insulating film over the entire surface of the insulating substrate including the first light shielding film pattern; an active layer on top of the gate insulating film and overlapping the first light shielding film pattern; a pixel electrode on top of the gate insulating film to be separated from the active layer; a source electrode and a drain electrode on top of the active layer, the drain electrode being separated from the source electrode and directly connected to the pixel electrode; a passivation film over the entire surface of the insulating substrate including the source electrode and the drain electrode; a second insulating film pattern on top of the passivation film and overlapping the first light shielding film pattern; a second light shielding film pattern on the second insulating film pattern; and a plurality of divided common electrodes on top of the passivation film and overlapping the pixel electrode, wherein the first light shielding film pattern is located on the top surface of the first insulating film pattern and the top surface of the insulating substrate within the opening, and overlapped with a thin film transistor comprising the active layer, the source electrode and the drain electrode.
地址 Seoul KR