Semiconductor device

摘要

A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.

主权项

1. A semiconductor device, comprising:
a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; a source electrode and a drain electrode formed over the second semiconductor layer; a lower insulating film formed over the second semiconductor layer between the source electrode and the drain electrode; a recess formed in the lower insulating film; a p-type electroconductive oxide film formed over the lower insulating film; an upper insulating film formed over the p-type electroconductive oxide film between the source electrode and the drain electrode; the upper insulating film is in contact with the source electrode and the drain electrode; and a gate electrode formed on the upper insulating film, wherein the recess in the lower insulating film is formed under a region where the gate electrode is formed.