| 发明名称 |
ESD protection using diode-isolated gate-grounded nMOS with diode string |
| 摘要 |
An ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. A method of forming an ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. |
| 申请公布号 |
US9269703(B2) |
申请公布日期 |
2016.02.23 |
| 申请号 |
US201414453907 |
申请日期 |
2014.08.07 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Pok Ponnarith;Schulmeyer Kyle;Cline Roger A.;Duvvury Charvaka |
| 分类号 |
H01L21/00;H01L27/02;H01L21/8234;H01L27/06;H01L29/66;H01L29/78 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
Garner Jacqueline J.;Cimino Frank D. |
| 主权项 |
1. A method of forming an integrated circuit, comprising:
forming a gate-grounded NMOS ESD device; forming an isolation diode in series with and coupled to a source of the gate-grounded NMOS transistor, wherein the isolation diode is segmented and placed in close proximity to, and on opposite sides of, a body of the gate-grounded NMOS ESD device; and forming a diode string coupled to the gate-grounded NMOS ESD device in a forward biased configuration, wherein diodes of the diode string are segmented and placed on multiple sides of the body of the gate-grounded NMOS ESD device. |
| 地址 |
Dallas TX US |
