FinFET device and method of manufacturing same

摘要

A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a fin structure disposed over the substrate. The fin structure includes one or more fins. The semiconductor device further includes an insulation material disposed on the substrate. The semiconductor device further includes a gate structure disposed on a portion of the fin structure and on a portion of the insulation material. The gate structure traverses each fin of the fin structure. The semiconductor device further includes a source and drain feature formed from a material having a continuous and uninterrupted surface area. The source and drain feature includes a surface in a plane that is in direct contact with a surface in a parallel plane of the insulation material, each of the one or more fins of the fin structure, and the gate structure.

主权项

1. A method of forming semiconductor device comprising:
forming a fin structure over a substrate, the fin structure including a plurality of fins; forming an insulation material over the fin structure including source and drain regions; etching a portion of the insulation material such that a portion of each of the plurality of fins is exposed and such that a portion of the insulation material in the source and drain regions is not removed; forming a gate structure over a portion of the fin structure and over a portion of the insulation material, the gate structure traversing the plurality of fins of the fin structure; and forming a source and drain feature in the source and drain regions, the source and drain feature including a surface in a plane facing an opposing surface of the insulation material, the plurality of fins of the fin structure, and the gate structure.