| 发明名称 | Processing apparatus and ion implantation apparatus | ||
| 摘要 | A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station. | ||
| 申请公布号 | US9267982(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201313764260 | 申请日期 | 2013.02.11 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Wang Shao-Hua;Chen Ming-Te;Lee Sheng-Wei |
| 分类号 | H01J37/00;G01R31/26;H01J37/30;H01J37/317 | 主分类号 | H01J37/00 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A processing apparatus, comprising: an end station configured to support thereon a workpiece; an ion beam generator configured to generate an ion beam toward the end station; and a scanning device configured to scan the ion beam in a transverse scanning direction; wherein the scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station. | ||
| 地址 | TW | ||