发明名称 |
Manufacturing method of polysilicon layer, and polysilicon thin film transistor and manufacturing method thereof |
摘要 |
A manufacturing method of a polysilicon layer and a manufacturing method of a polysilicon thin film transistor. The manufacturing method of the polysilicon layer includes: providing a substrate; forming a barrier layer and a buffer layer on the substrate; disposing a plurality of grooves in the buffer layer by a patterning process, and forming crystal seeds on the buffer layer; forming an amorphous silicon layer on the buffer layer provided with the grooves and on the crystal seeds; transferring the amorphous silicon layer into a polysilicon layer using a thermal treatment process. |
申请公布号 |
US9269820(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201314348699 |
申请日期 |
2013.11.11 |
申请人 |
ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.;BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Wang Zuqiang |
分类号 |
H01L29/786;H01L21/02;H01L27/12;H01L21/306;H01L21/308;H01L29/04;H01L29/16;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A manufacturing method of a polysilicon layer, comprising:
providing a substrate; forming a buffer layer on the substrate; disposing a plurality of grooves in the buffer layer by a patterning process, and forming crystal seeds on the buffer layer, forming a first amorphous silicon layer on the buffer layer; transferring the first amorphous silicon layer into a first polysilicon layer; applying photoresist on the first polysilicon layer; after a multi-tone or half-tone exposure and development, forming a photoresist-completely-removed first window region at a predetermined position where the grooves are subsequently formed, forming photoresist with a second thickness at a predetermined position where the crystal seeds are subsequently formed, and forming photoresist with a first thickness in other regions, the second thickness being greater than the first thickness; etching to remove the first polysilicon layer and a part of the buffer layer exposed from the first window region to form the grooves, ashing to remove the photoresist with the first thickness; etching to remove the first polysilicon layer to be exposed; ashing to remove a remaining part of the photoresist with the second thickness, to form the crystal seeds; wherein the plurality of grooves are arranged respectively along a first direction and a second direction intersecting the first direction to form an interleaved groove pattern; forming an amorphous silicon layer on the buffer layer provided with the grooves and on the crystal seeds; transferring the amorphous silicon layer into a polysilicon layer using a thermal treatment process. |
地址 |
Ordos, Inner Mongolia CN |