Enhanced device and manufacturing method therefor

摘要

An enhancement-mode device comprises: a substrate, an epitaxial multilayer structure formed on the substrate, and a gate region formed on the epitaxial multilayer structure, where the epitaxial multilayer structure sequentially comprises from the substrate: a nucleation layer, a buffer layer, a heterojunction structure layer, a second gallium nitride layer, a nitride transition layer and a dielectric layer, where the heterojunction structure layer comprises a gallium nitride channel layer and a barrier layer which has a sandwich structure, and a middle layer of the sandwich structure is a first gallium nitride layer; and the gate region comprises a gate metal layer and a p-type nitride layer located under the gate metal layer, wherein the p-type nitride layer is embedded into the epitaxial multilayer structure, a bottom of the p-type nitride layer is in contact with the first gallium nitride layer of the sandwich structure.

主权项

1. An enhancement-mode device, comprising a substrate, an epitaxial multilayer structure formed on the substrate, and a gate region formed on the epitaxial multilayer structure, wherein:
the epitaxial multilayer structure sequentially comprises from the substrate: a nucleation layer, a buffer layer, a heterojunction structure layer, a second gallium nitride layer, a nitride transition layer and a dielectric layer, wherein the heterojunction structure layer comprises a gallium nitride channel layer and a barrier layer which has a sandwich structure, wherein a middle layer of the sandwich structure is a first gallium nitride layer, and a material of a second outer layer of the sandwich structure far away from the gallium nitride channel layer comprises at least one of aluminum, gallium nitride and indium; and the gate region comprises a gate metal layer and a p-type nitride layer located under the gate metal layer, wherein the p-type nitride layer is embedded into the epitaxial multilayer structure, a bottom of the p-type nitride layer is in contact with the first gallium nitride layer of the sandwich structure, and a top of the p-type nitride layer is not higher than the nitride transition layer.