Multi-gate MOSFET with embedded isolation structures

摘要

A multi-gate MOSFET includes a substrate, a dielectric layer and at least a fin-shaped structure. The substrate has a first area and a second area. The dielectric layer is only located in the substrate of the first area. At least a fin-shaped structure is located on the dielectric layer. Moreover, the present invention also provides a multi-gate MOSFET process forming said multi-gate MOSFET.

主权项

1. A multi-gate MOSFET, comprising:
a substrate having a first area and a second area; a dielectric layer being a single layer only located in the substrate in the first area; at least a fin-shaped structure located on the dielectric layer, wherein a part of the dielectric layer directly below the fin-shaped structure protrudes from a part of the dielectric layer beside the fin-shaped structure; a liner located only on a part of sidewalls of the fin-shaped structure without contacting the dielectric layer; and an isolation structure located on the dielectric layer and surrounding the fin-shaped structure, wherein a top surface of the liner is trimmed with a top surface of the isolation structure, wherein the isolation structure and the dielectric layer have an interface between them.