| 发明名称 | Graphene semiconductor and electrical device including the same | ||
| 摘要 | A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene. | ||
| 申请公布号 | US9269764(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201313905527 | 申请日期 | 2013.05.30 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Ahn Jong-ryoul;Seo Jeong-tak;Park Ji-hoon;Jeon Cheol-ho |
| 分类号 | H01L29/16;H01L29/207;H01L29/786;H01L29/06;H01L21/02;H01L51/30;H01L51/40;H01L29/778;C23C18/08;B82Y99/00;B82Y30/00 | 主分类号 | H01L29/16 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A graphene semiconductor comprising: graphene; a metal atomic layer disposed on the graphene; and a first oxide layer disposed on the metal atomic layer, wherein the metal atomic layer comprises an alkali metal, which is capable of charge transfer with the graphene, the first oxide layer comprises an alkali metal oxide, the alkali metal oxide is an oxidation product of a surface of the metal atomic layer, and a thickness of the first oxide layer is in a range of about 1 nanometer to about 100 nanometers. | ||
| 地址 | KR | ||