发明名称 Thin film transistor array substrate for digital photo-detector
摘要 A thin film transistor array substrate for a digital photo-detector is provided. The thin film transistor array substrate includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; and a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines. A contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region.
申请公布号 US9269740(B2) 申请公布日期 2016.02.23
申请号 US201314089897 申请日期 2013.11.26
申请人 LG Display Co., Ltd. 发明人 Kim Dae-Kyu;Park Sung-Il;Ha Sung-Bong
分类号 H01L31/113;H01L27/146 主分类号 H01L31/113
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A thin film transistor array substrate for a digital photo-detector, comprising: a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; and a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines, wherein a contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region.
地址 Seoul KR