发明名称 |
Light-emitting device |
摘要 |
A light-emitting device includes a support substrate; a light-emitting stacked layer; transparent-conductive bonding layer; and a semiconductor contact layer. The light-emitting stacked layer includes a first semiconductor layer; an active layer; and a second semiconductor layer, wherein a polarity of the first semiconductor layer is different from that of the semiconductor layer. A first pad is formed on an exposed portion of the first semiconductor layer and a second pad is formed on the semiconductor contact layer. A polarity of the semiconductor contact layer is different from that of the second semiconductor layer. |
申请公布号 |
US9269696(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201213455851 |
申请日期 |
2012.04.25 |
申请人 |
EPISTAR CORPORATION |
发明人 |
Chen Wei-Yu |
分类号 |
H01L33/08;H01L25/075;H01L33/42;H01L33/62 |
主分类号 |
H01L33/08 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. A light-emitting device, comprising:
a support substrate; a plurality of light-emitting units on the support substrate, wherein each of the plurality of light-emitting units comprises:
a light-emitting stacked layer comprising an active layer; a first semiconductor layer between the support substrate and the active layer; and a second semiconductor layer on the active layer; a transparent-conductive bonding layer on the light-emitting stacked layer; and a semiconductor contact layer connecting two of the light-emitting units through the transparent-conductive bonding layer, wherein the semiconductor contact layer contacts and electrically connects the transparent-conductive bonding layers; wherein the transparent-conductive bonding layer is between the semiconductor contact layer and the second semiconductor layer. |
地址 |
Hsinchu TW |