发明名称 Device for analyzing film on surface of electrode for rechargeable lithium battery and method of analyzing film on surface of electrode for rechargeable lithium battery using same
摘要 A device for analyzing a film on a surface of an electrode for a rechargeable lithium battery includes: an inert chamber capable of maintaining an inert atmosphere including controlled amounts of moisture and oxygen and including an inner space for pretreating a sample including the film on the surface of the electrode; a first analyzer coupled to the inert chamber through a connection tube, the first analyzer being configured to receive the sample and being configured to provide composition and thickness information of the film; an inert holder configured to be assembled around the sample in the inert chamber and configured to maintain the inert atmosphere around the sample; and a second analyzer mounted with the inert holder therein and configured to provide shape information of the film. A method of analyzing a film on a surface of an electrode using the device is also disclosed.
申请公布号 US9267904(B2) 申请公布日期 2016.02.23
申请号 US201213597229 申请日期 2012.08.28
申请人 Samsung SDI Co., Ltd. 发明人 Lee Seon-Hong;You Ho-Gon;Song Joo-Han;Jung In-Ho;Kim Jake
分类号 G01T1/36;G01N23/227;H01J37/28;H01M4/13;H01M10/42 主分类号 G01T1/36
代理机构 Christie, Parker & Hale, LLP 代理人 Christie, Parker & Hale, LLP
主权项 1. A method of analyzing a film on a surface of an electrode for a rechargeable lithium battery comprising: pretreating a sample comprising the film on the surface of the electrode in an inert chamber and controlling the amount of moisture and oxygen in an inert atmosphere in the inert chamber; transporting the sample into a first analyzer to obtain composition and thickness information of the film in the first analyzer; transporting the sample into the inert chamber and assembling an inert holder around the sample in the inert chamber; ion etching the sample in the first analyzer before transporting the sample to the inert chamber; and transporting the inert holder to a second analyzer to obtain shape information of the film in the second analyzer, wherein the first analyzer is an X-ray Photoelectron Spectrometer (XPS), wherein the second analyzer is a high resolution scanning electron microscope, wherein an ion beam having a tilted angle relative to the surface of the sample is emitted during the ion etching, wherein the ion beam has an accelerating voltage in a range of about 0.3 kV to about 0.5 kV and a current condition in a range of about 0.2 μA to about 0.5 μA, and wherein the ion etching is performed until the electrode material under the film approaches about 50 to about 70 atom % based on the total amount of the electrode material prior to the ion etching.
地址 Yongin-si KR
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