APPARATUS AND METHOD FOR PERFORMING PLASMA ENHANCED ATOMIC LAYER DEPOSITION EMPLOYING VERY HIGH FREQUENCY

摘要

The present invention relates to a device and a method for performing plasma enhanced atomic layer deposition (PE-ALD) by using a very high frequency (VHF). According to an embodiment of the present invention, an atomic layer deposition device comprises: a chamber providing a place in which a process is performed; a substrate support portion supporting a substrate in the chamber; a gas supply portion supplying a gas to the chamber; an exhaust portion exhausting the gas from the chamber; a plasma generating portion installed in the chamber to generate plasma in the chamber; and a VHF power source applying a signal of a VHF band to the plasma generating portion. Therefore, the atomic layer deposition device improves a deposition rate and thin film density by the PE-ALD.