| 发明名称 |
Metal contact scheme for solar cells |
| 摘要 |
A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution. |
| 申请公布号 |
US9269851(B2) |
申请公布日期 |
2016.02.23 |
| 申请号 |
US201214357165 |
申请日期 |
2012.11.12 |
| 申请人 |
NEWSOUTH INNOVATIONS PTY LIMITED |
发明人 |
Vais Valantis;Lennon Alison Joan;Wenham Stuart Ross;Ji Jing Jia;Wenham Alison Maree |
| 分类号 |
H01L31/0224;H01L31/18;H01L21/225;H01L21/268;C25D17/00;C25D11/04;C25D17/10;C25D17/14;C25D7/12 |
主分类号 |
H01L31/0224 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction, the method comprising:
immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution, and wherein the electric field is produced by placing into the solution of metal ions at least one electrode which does not physically contact the semiconductor device. |
| 地址 |
Sydney, NSW AU |
