Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

摘要

An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

主权项

1. An integrated circuit, comprising:
a semiconductor substrate; at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the semiconductor substrate limited by an insulating region formed in the semiconductor substrate; and at least one electrically inactive trench located extending completely through the insulating region and into the semiconductor substrate and containing an internal area configured to reduce compressive stress in the active region; wherein the at least one electrically inactive trench comprises:
an upper part located in the insulating region; anda lower part extending from the upper part and located in the semiconductor substrate underneath the insulating region, wherein said internal area is located in both the upper part and the lower part.