Semiconductor device

摘要

A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate. The first and second ridges run in a first direction. The semiconductor device further includes a body region disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, and a gate electrode adjacent to the body region. The first and second ridges are connected with the body region. A plurality of further ridges are formed in the body region, the further ridges extending in a second direction intersecting the first direction. The gate electrode runs in the first direction, and the gate electrode is disposed at at least two sides of the further ridges.

主权项

1. An integrated circuit, comprising:
a first transistor at least partially formed in a semiconductor substrate, the first transistor comprising a first body region and a first gate electrode; a plurality of second transistors connected in series to form a series circuit, the series circuit being connected in series with the first transistor and implementing an active drift zone field effect transistor, at least one of the second transistors comprising:
a first ridge and a second ridge extending from a first main surface of the semiconductor substrate, the first and second ridges running in a first direction;a second body region of at least one of the second transistors being disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, the first and second ridges being connected with the second body region; anda second gate electrode of said one of the second transistors being disposed adjacent to the second body region, the second gate electrode running in the first direction.