Through silicon via guard ring

摘要

The present disclosure relates to forming a plurality of through silicon vias guard rings proximate the scribes streets of a microelectronic device wafer. The microelectronic device wafer includes a substrate wherein the through silicon via guard ring is fabricated by forming vias extending completely through the substrate. The through silicon via guard rings act as crack arresters, such that defects caused by cracks resulting from the dicing of the microelectronic wafer are substantially reduced or eliminated.

主权项

1. A method of forming a guard ring, comprising:
forming a microelectronic device wafer comprising a substrate having a first and a second surface and an interconnect layer disposed on the substrate first surface, the substrate including a plurality of integrated circuits formed proximate the substrate first surface, wherein each of the plurality of the plurality of integrated circuits are separated by at least one dicing street; forming an interconnect guard ring within the interconnect layer and proximate the dicing street; and forming a plurality of vias proximate the dicing street and extending from the substrate second surface to the substrate first surface, wherein the plurality of vias abut the interconnect guard ring at the substrate first surface.