| 发明名称 | Fumaric acid diester based resin for retardation film and retardation film comprising the same | ||
| 摘要 | A fumaric acid diester based resin containing a dipropyl fumarate residue unit and a fumaric acid diester residue unit having a C1 or C2 alkyl group, wherein in a retardation film composed of the resin, when a refractive index in the fast axis direction within the film plane is designated as nx, a refractive index in the film in-plane direction orthogonal thereto is designated as ny, and a refractive index in the thickness direction of the film is designated as nz, the respective refractive indices are satisfied with a relationship of (nx≦ny<nz) and a relationship between a film thickness and an out-of-plane retardation measured at a wavelength of 550 nm and expressed by the specific equation is 4.5 nm/film thickness (μm) or more in terms of an absolute value. | ||
| 申请公布号 | US9266988(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201113807106 | 申请日期 | 2011.06.24 |
| 申请人 | TOSOH CORPORATION | 发明人 | Makita Kenichi;Shimosato Shinji;Toyomasu Shinsuke;Doi Tohru |
| 分类号 | C08F222/10;C08F222/00;C08F222/14;G02B1/04;G02F1/13363;G02B5/30 | 主分类号 | C08F222/10 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A retardation film comprising: a fumaric acid diester based resin which comprises: from 60 to 70% by mole of a diisopropyl fumarate residue unit; andfrom 30 to 40% by mole of a fumaric acid diester residue unit having an alkyl group having a carbon number of 1 or 2, the retardation film having a thickness of from 10 to 50 μm, wherein refractive indices of the retardation film satisfy formula: nx≦ny<nz, where nx is a refractive index in a fast axis direction within a film plane of the retardation film, ny is a refractive index in a film in-plane direction orthogonal thereto, and nz is a refractive index in a thickness direction of the retardation film; and wherein an out-of-plane retardation per unit thickness of the retardation film is 4.5 nm/film thickness (μm) or more in terms of an absolute value, where the out-of-plane retardation per unit thickness is a value of an out-of-plane retardation (nm) divided by the thickness of the retardation film (μm), and the out-of-plane retardation (Rth) is measured at a wavelength of 550 nm and represented by formula (a): Rth=((nx+ny)/2−nz)×d (a) wherein d represents a thickness of the retardation film (nm). | ||
| 地址 | Shunan-shi JP | ||