| 摘要 |
A pellicle for extreme ultraviolet (EUV) lithography comprises a pellicle film, a supporting structure and a handling block. The pellicle film has a first surface facing a mask, and a second surface opposite to the first surface. The pellicle film allows EUV, which passes through the mask, to penetrate the pellicle film. The supporting structure is formed on the second surface of the pellicle film to support the pellicle film. The handling block is arranged on the first surface of the pellicle film. The handling block has an opening configured to expose the pellicle film. Thus, a pellicle is handled by using a thick handling block, not a thin pellicle film, so the thin pellicle film is not damaged. The pellicle protects a mask from byproducts generated in an EUV lithography process, so the mask is not contaminated. |
