发明名称 DEVICE IMITATING SYNAPTIC AND METHOD OF MANUFACTURING THEREOF
摘要 Provided are a synaptic device and a method for manufacturing the same. The synaptic device comprises: a gate electrode; an active layer; an ion-gel gate insulating layer comprising an insulative polymer and an ionic material, arranged between the gate electrode and the active layer; and a source electrode and a drain electrode which are electrically connected to the active layer. The gate electrode or the active layer is supported on a substrate. Accordingly, the present invention can provide a new synaptic device which can simultaneously perform signal transmission and self-learning.
申请公布号 KR20160019682(A) 申请公布日期 2016.02.22
申请号 KR20140104279 申请日期 2014.08.12
申请人 POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 LEE, TAE WOO;WENTAO XU;MIN, SUNG YONG
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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