TUNNELING DIODE USING HYBRID STRUCTURE OF GRAPHENE-SILICON QUANTUM DOTS AND METHOD OF MANUFACTURING THE SAME

摘要

Provided is a tunneling diode including a hybrid structure of graphene-silicon quantum dots, capable of improving the performance and the electrical characteristics of a diode through the control of the size of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present invention can be used for photoelectric devices based on a diode. The tunneling diode of the present invention comprises: a hybrid structure which comprises a silicon quantum dot layer which comprises silicon quantum dots formed in a silicon oxide thin film and, a graphene doped and formed into a single layer on the silicone quantum dot layer; and an electrode formed on the top and bottom of the hybrid structure.