Organic Resistive Random Access Memory and a Preparation Method Thereof

摘要

The present invention discloses an organic resistive random access memory and a preparation method thereof. The memory uses silicon as a substrate, and has a MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where the deposition of Al2O3 is performed once by ALD between each two deposition of parylene. A critical region which is in favor of forming a conductive channel could be formed by controlling the deposition area of Al2O3, and further control the electrical characteristics of the memory. Through the present invention, the cycle-to-cycle and device-to-device uniformity could be effectively improved, without changing the basic structure of the memory.

主权项

1. An organic resistive random access memory, using silicon as substrate, with MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where deposition of Al2O3 is performed once by using ALD between each twice performing of deposition of parylene, and a critical region which is in favor of forming of a conductive channel is formed by controlling a deposition area of Al2O3, thereby controlling electrical characteristics of the memory.