OXIDE FILM SCHEME FOR RRAM STRUCTURE

摘要

The present disclosure relates to a method of forming an RRAM cell having a dielectric data layer that provides good performance, device yield, and data retention, and an associated apparatus. In some embodiments, the method is performed by forming an RRAM film stack having a bottom electrode layer disposed over a semiconductor substrate, a top electrode layer, and a dielectric data storage layer disposed between the bottom electrode and the top electrode. The dielectric data storage layer has a performance enhancing layer with a hydrogen-doped oxide and a data retention layer having an aluminum oxide. The RRAM film stack is then patterned according to one or more masking layers to form a top electrode and a bottom electrode, and an upper metal interconnect layer is formed at a position electrically contacting the top electrode.

主权项

1. A method of forming an RRAM (resistive random access memory) cell, comprising:
forming an RRAM film stack having a bottom electrode layer disposed over a semiconductor substrate, a top electrode layer, and a dielectric data storage layer disposed between the bottom electrode and the top electrode, wherein the dielectric data storage layer comprises a performance enhancing layer having a hydrogen-doped oxide and a data retention layer comprising an aluminum oxide; patterning the RRAM film stack according to one or more masking layers to form a top elected and a bottom electrode; and forming an upper metal interconnect layer at a position electrically contacting the top electrode.