| 发明名称 |
REPLACEMENT METAL GATES TO ENHANCE TRANISTOR STRAIN |
| 摘要 |
Some embodiments of the present invention include apparatuses and methods relating to NMOS and PMOS transistor strain. |
| 申请公布号 |
US2016049510(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514882434 |
申请日期 |
2015.10.13 |
| 申请人 |
Intel Corporation |
发明人 |
Bohr Mark T. |
| 分类号 |
H01L29/78;H01L29/66;H01L29/49;H01L21/8238 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
Santa Clara CA US |
