| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which can achieve favorable electrical joint between layered photoelectric conversion layers thereby to improve carrier conductivity and photoelectric conversion efficiency.SOLUTION: A photoelectric conversion device comprises: a plurality of photoelectric conversion layers 10, 20 having band gaps different from each other; and a collector layer 3 arranged between the plurality of photoelectric conversion layers 10, 20, in which the plurality of photoelectric conversion layers 10, 20 respectively have structures where p-type photoelectric conversion layers 10a, 20a and n-type photoelectric conversion layers 10b, 20b are layered, and the collector layer 3 has a structure where a p-type semiconductor layer 3a and an n-type semiconductor layer 3b each having a band gap of 3 eV and over. The p-type photoelectric conversion layers 10a, 20a and the n-type photoelectric conversion layers 10b, 20b, and the p-type semiconductor layer 3a and the n-type semiconductor layer 3b are arranged in a manner such that the p-type and the n-type are alternatively layered.SELECTED DRAWING: Figure 1 |
