发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a transistor having a small subthreshold swing value; or provide a transistor having a shallow interface state density at an interface between a semiconductor and a gate insulator; or provide a transistor having favorable electric characteristics.SOLUTION: A semiconductor device comprises an insulator, a semiconductor and a conductor. The semiconductor has a region where the semiconductor and the conductor overlap each other via the insulator. In the region, a shallow interface state density in an interface between the semiconductor and the insulator is equal to or less than 1×10cm.SELECTED DRAWING: Figure 1
申请公布号 JP2016027650(A) 申请公布日期 2016.02.18
申请号 JP20150132303 申请日期 2015.07.01
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MATSUDA SHIMPEI;TAKEUCHI TOSHIHIKO;MATSUBAYASHI DAISUKE
分类号 H01L29/786;H01L21/336;H01L21/66;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L29/786
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