发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having a small subthreshold swing value; or provide a transistor having a shallow interface state density at an interface between a semiconductor and a gate insulator; or provide a transistor having favorable electric characteristics.SOLUTION: A semiconductor device comprises an insulator, a semiconductor and a conductor. The semiconductor has a region where the semiconductor and the conductor overlap each other via the insulator. In the region, a shallow interface state density in an interface between the semiconductor and the insulator is equal to or less than 1×10cm.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016027650(A) |
申请公布日期 |
2016.02.18 |
申请号 |
JP20150132303 |
申请日期 |
2015.07.01 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MATSUDA SHIMPEI;TAKEUCHI TOSHIHIKO;MATSUBAYASHI DAISUKE |
分类号 |
H01L29/786;H01L21/336;H01L21/66;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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